| Vol.
32 - nº 2A - June - 2002 Foreword |
|
| PAGES | ARTICLES |
| 257-258 |
|
| 259-261 | Semiconductor
Superlattices: Artificial Crystals with Unique Electronic and Transport
Properties H.T. Grahn |
| 262-265 | Laser
Effects in Semiconductor Heterostructures Within an Extended Dressed-Atom
Approach H.S. Brandi, A. Latgé, and L.E. Oliveira |
| 266-268 | Spin
Dynamics Driven by the Electron-Hole Exchange Interaction in Quantum Wells
M.Z. Maialle |
| 269-274 | Nipi
Delta-Doping Superlattices for Amplitude Modulation C. V.-B. Tribuzy, S.M. Landi, M.P. Pires, R. Butendeich, P.L. Souza, A. C. Bittencourt, G.E. Marques, and A.B. Henriques |
| 275-283 | The
Regime of Electromagnetically Induced Transparency in Optically Dense
Media: from Atoms to Excitons M. Artoni, F. Bassani, I. Carusotto, and G.C. La Rocca |
| Heterostructures, mesoscopic and strongly correlated systems |
|
| 284-286 | A.M. Alcalde, G.E. Marques, G. Weber, T.L. Reinecke |
| 287-289 | Influence
of Annealing on the Optical and Electrical Properties of Multilayered
InAs/GaAs Quantum Dots A.J. Chiquito, Yu. A. Pusep, S. Mergulhão, Y. Galvão Gobato, and J. C. Galzerani |
| 290-292 | Anomalous
Blueshift in Vertically Coupled InAs/GaAs Quantum Dots Using InGaAs Strain-Reducing
Layers M.J. da Silva and A.A. Quivy |
| 293-295 | Effect
of the Lead Dimensionality over Transport Properties in Quantum Dots
L. Craco and G. Cuniberti |
| 296-299 | Ballistic
Transport in Semiconductor Quantum Wires in the Presence of Defects
A.R. Rocha and J.A. Brum |
| 300-302 | Electron-Phonon
Interaction in Electronic Tunneling: From Sequential Rate Equations to
a Coherent Description L.E.F.F. Torres, H.M. Pastawski, and S.S. Makler |
| 303-305 | Zeeman
Effect in Cd1-xMnxTe Parabolic and Half-Parabolic
Quantum Wells J.F.R. Cunha, F.A.P. Osório, A.N. Borges, and M.A.R. Souza |
| 306-309 | Anomalous
Shift of the Recombination Energy in Single Asymmetric Quantum Wells
N.O. Dantas, Fanyao Qu, and P. C. Morais |
| 310-313 | Exciton
Trapping in a Periodically Modulated Magnetic Field J.A.K. Freire, V.N. Freire, G.A. Farias, and F.M. Peeters |
| 314-317 | Optical
Studies of Correlation Between Interface Disorder and the Photoluminescence
Line Shape in GaAs/InGaP Quantum Wells E. Laureto, E.A. Meneses, W. Carvalho Jr., A.A. Bernussi, E. Ribeiro, E.C.F. da Silva, and J.B.B. de Oliveira |
| 318-320 | Electric-Field
Effects on the Band-Edge States of GaAs/AlAs Coupled Quantum Wells
F.J. Ribeiro, R.B. Capaz, and Belita Koiller |
| 321-323 | Resonant
Tunneling of Polarized Electrons Through Nonmagnetic III-V Semiconductor
Multiple Barriers C. Moys\'es Araújo, A. Ferreira da Silva, and E.A. de Andrada e Silva F.G. Brito and J.C. Egues |
| 324-326 | Shot
Noise in the Presence of Spin-Flip Scattering F.G. Brito and J.C. Egues |
| 327-330 | Subband
Structure of II-VI Modulation-Doped Magnetic Quantum Wells H.J.P. Freire and J.C. Egues |
| 331-333 | Transport
and Optical Properties of Resonant Tunneling Structures A. Vercik, Y.G. Gobato, M. Mendoza, and P.A. Schulz |
| 334-337 | Interfacial
Layers and Impurity Segregation in InP/In0.53Ga0.47As
Superlattices L.K. Hanamoto, A.B. Henriques, C.V.-B. Tribuzy, P.L. Souza, B. Yavich, and E. Abramof |
| 338-340 | Frictional
Drag Between Non-Equilibrium Electron Gases X.F. Wang and I.C. da Cunha Lima |
| 341-343 | Diffusive-Like
Minibands in Finite Superlattices of Disordered Quantum Wells
R. Rey-González, E. Machado, and P.A. Schulz |
| 344-346 | Low-Temperature
Electron Mobility in Parabolic Quantum Wells R. M. Seraide and G.-Q. Hai |
| 347-349 | Landau
Levels in Two and Three-Dimensional Electron Gases in a Wide Parabolic
Quantum Well C.S. Sergio, G.M. Gusev, J.R. Leite, E.B. Olshanetskii, A.A. Bykov, N.T. Moshegov, A.K. Bakarov, A.I. Toropov, D.K. Maude, O. Estibals, and J.C. Portal |
| 350-352 | Effective
Conductivity of Two-Dimensional Heterostructures with Non-Screened Potential
F.T. Vasko and G.-Q. Hai |
| 353-355 | Carrier
Dynamics Investigated by Time Resolved Optical Spectroscopy S.J. Luyo, M.J.S.P. Brasil, H.B. de Carvalho, W. Carvalho Jr., and A.A. Bernussi |
| 356-358 | Study
of Dynamical Dipole Moment in an Asymmetric Double Quantum Well
J. Bohórquez and A.S. Camacho B |
Growth, processing and devices, bulk and surface properties, defects, and new materials |
|
| 359-361 | In-situ
Determination of Indium Segregation in InGaAs/GaAs Quantum Wells Grown
by Molecular Beam Epitaxy |
| 362-365 | Carbon
Doping of InAlAs Layers Grown by Metalorganic Vapor Phase Epitaxy
M.L.P. Ribeiro, B. Yavich, C.V.B. Tribuzy, and P.L. Souza |
| 366-368 | Local
Order Structure of SiOxNy:H Grown by PECVD
W.L. Scopel, M.C.A. Fantini, M.I. Alayo, and I. Pereyra |
| 369-371 | Surface
Instability and Dislocation Nucleation in Strained Epitaxial Layers
O.S. Trushin, E. Granato, S.C. Ying , J.M. Kosterlitz, T. Ala-Nissila, and P. Salo |
| 372-375 | Preparation
and Characterization of Nanocrystalline h-BN Films Prepared by PECVD Method
J. Vilcarromero, M.N.P. Carreno, I. Pereyra, N.C. Cruz, and E.C. Rangel F. Dondeo, P.V. Santos, M. Ramsteiner, D. Comedi, M.A.A. Pudenzi, and I. Chambouleyron |
| 376-378 | Pulsed
Laser Crystallization of SiGe Alloys on GaAs F. Dondeo, P.V. Santos, M. Ramsteiner, D. Comedi, M.A.A. Pudenzi, and I. Chambouleyron |
| 379-382 | Boron
Doping of Hydrogenated Amorphous Silicon Prepared by RF-co-Sputtering
M.M. de Lima Jr. F.L. Freire Jr., and F.C. Marques |
| 383-385 | Structural
and Chemical Properties of ZnSe-Fe Electrodeposited Granular Films
A.R. Moraes, D.H. Mosca, W.H. Schreiner, N. Mattoso, and E. Silveira |
| 386-388 | Many
Particle Theory for the Luminescence, Characterization and Simulation
of Quantum Well Lasers Structures M.F. Pereira Jr., A.A. Bernussi, W. Carvalho Jr., M.T. Furtado, and A.L. Gobbi E.A. de Vasconcelos, E.F. da Silva Jr., T. Katsube, and S. Yoshida |
| 389-391 | Ionizing
Radiation and Hot Carrier Effects in SiC MOS Devices E.A. de Vasconcelos, E.F. da Silva Jr., T. Katsube, and S. Yoshida |
| 392-395 | First-Principles
Study of the Adsorption of PH3 on Ge(001) and Si(001) Surfaces
R. Miotto, A.C. Ferraz, and G.P. Srivastava P.G. Vivas, E.E. da Silva, L.C. de Carvalho, J.L.A. Alves, H.W. Leite Alves, L.M.R. Scolfaro, and J.R. Leite |
| 396-398 | Adsorption
of Si and C Atoms over SiC (111) Surfaces P.G. Vivas, E.E. da Silva, L.C. de Carvalho, J.L.A. Alves, H.W. Leite Alves, L.M.R. Scolfaro, and J.R. Leite |
| 399-401 | On
the Morphology of Films Grown by Droplet-Assisted Molecular Beam Epitaxy
T.E. Lamas and A.A. Quivy |
| 402-404 | Hole
Transport Characteristics in Pure and Doped GaSb L.G.O. Messias and E. Marega Jr. |
| 405-408 | First-Principles
Calculations of the Effective Mass Parameters of AlxGa1-xN
and ZnxCd1-xTe Alloys R. de Paiva, R.A. Nogueira, C. de Oliveira, H.W. Leite Alves, J.L.A. Alves, L.M.R. Scolfaro, and J.R. Leite |
| 409-411 | Magnetic
Properties of Gadolinium-Doped Amorphous Silicon Films M.S. Sercheli, C. Rettori, and A.R. Zanatta |
| 412-414 | Nonlinear
Dynamics Time Series Analysis of Chaotic Current Oscillations in a Semi-Insulating
GaAs Sample R.L. da Silva, R.M. Rubinger, A.G. de Oliveira, and G.M. Ribeiro |
| 415-417 | Bare
LO-Phonon Peak in THz-Emission Signals: a Dielectric-Function Analysis
F.M. Souza and J.C. Egues |
| 418-420 | Structure
and Bonding of Iron-Acceptor Pairs in Silicon S. Zhao, J.F. Justo, L.V.C. Assali, and L.C. Kimerling |
| 421-423 | A
Silicon-Polymer Heterostructure for Sensor Applications |
| 424-426 | Electronic
States in Carbon Nanotube Quantum-Dots C.G. Rocha, T.G. Dargam, R.B. Muniz, and A. Latgé |
| 427-429 | Ab
Initio Studies of Electromechanical Effects in Carbon Nanotubes
M.V. Alves, R.B. Capaz, B. Koiller, E. Artacho, and H. Chacham |
| 430-432 | Hole
Spin Polarization in AlAs/Ga1-x-yMnxAlyAs
Structures A. Ghazali, I.C. da Cunha Lima, and M.A. Boselli |
| 433-435 | Magnetic
Multilayers in Ga1-xMnxAs/GaAs Structures
L.L. da Silva, M.A. Boselli, X.F. Wang, J. Weberszpil, S.S. Makler, I.C. da Cunha Lima, and A. Ghazali |
| 436-438 | Defect
Centers in a-SiNx: Electronic and Structural Properties
F. de Brito Mota, J.F. Justo, and A. Fazzio |
| 439-441 | Electron
Mobility in Nitride Materials C. G. Rodrigues, V. N. Freire, A.R. Vasconcellos, and Roberto Luzzi |
| 442-444 | AC
Hot Carrier Transport in 3C- and 6H-SiC in the Terahertz Frequency and
High Lattice Temperature Regime E.F. Bezerra, E.W.S. Caetano, V.N. Freire, J.A.P. da Costa, and E.F. da Silva Jr. |
| 445-447 | Interface
Effects on the Vibrational Properties of 3C-InN/3C-AlN Superlattices
E.F. Bezerra, V.N. Freire, J. Mendes Filho, and V. Lemos |
| 448-451 | Planar
Force-Constant Method for Lattice Dynamics of Cubic III-Nitrides
H.W. Leite Alves, J.L.A. Alves, L.M.R. Scolfaro, and J.R. Leite |