| PAGES |
ARTICLES
|
| 3-28 |
Rayleigh-Ritz Variational Eigenvalues and Transition Mornents for the Potentials
J. Mauricio O. Matos, L. L. Gonçalves
|
| 29-42 |
Interpolated Nambu- Jona-Lasinio Model
Marcus Benghi Pinto
|
| 43-50 |
Quasi Particle Excitations and Photoemission Spectra in Solid C60
Steven G. Louie, Eric L. Shirley
|
| 51-57 |
Total Energy Electronic Struct Ure Calculations: Frorn Silicon to Carbsn 60*
Atsushi Oshiyama
|
| 58-66 |
Lattice Dynamics of Boron Phosphide
H. W. Leite Alves, K. Kunc
|
| 67-76 |
Growth and Characterization of Nanostructures of III-V Compound Semiconductors
A. G. de Oliveira
|
| 77-85 |
Investigation and Control of the Surface Processes During Semiconductor Nanostructures Formation by MBE
O. P. Pchelyakov, V. A. Markov, L. V. Sokolov
|
| 86-93 |
Investigation of Roughness at InP/InAs Interfaces
Maria J. S. P. Brasil
|
| 94-98 |
Macro-Structures in Atomic Bearns: Possible Applications in Controlling the Morphology of Film Deposition
S. C. Zilio, V. S. Bagnato
|
| 99-105 |
ZnS, ZnSe and ZnTe (110) Surfaces: Atomic Structures and Electronic Properties
J. L. A. Alves, K. Watari, A. C. Ferraz
|
| 106-112 |
Vibrational Properties of Homopolar and Heteropolar Surfaces and Interfaces of the CdTe/HgTe System
R. Rey-Gonzales, L. Quiroga, A. Camacho
|
| 113-120 |
Fermion-Chern-Simons Theory of the Half-Filled Landau Level
Bertrand I. Halperin
|
| 121-126 |
Electronic Raman Scattering on Modulation Doped GaAs Quantum Wells: Conduction Band Structure and Collective Effects
Bernard Jusserand
|
| 127-132 |
GaAs Based Type II Heterostructures
R. Planel
|
| 133-144 |
Excitonic Effects in 11-VI Semiconductor Hetero Structures
V. A. Chitta
|
| 145-152 |
Coupled-Exciton States in 2D-Semiconductor Systems
J. A. Brum
|
| 153-162 |
Magneto-Optical Properties of Coupled Double Quantum Wells
K. K. Bajaj, J. Cjen
|
| 163-169 |
Electrical Transport Properties of Superlattices under Intense Terahertz Electric Fields
P. S. S. Guimarães, Brian J. Keay, Jann P. Kaminski, S. J. Allen, P. F. Hopkins Junior, A. C. Gossard, L. T. Florez, J. P. Harbison
|
| 170-174 |
The Effect of Chaotic Dynamics in Resonant Tunneling'
L. Eaves, T. M. Fromhold, M. L. Leadbeater, T. J. Foster, P. C. Main, F. W. Sheard
|
| 175-179 |
Evaluation of Carrier Capture Times for Very Thin InGaAs/InP Quantum-Wells
P. L. Souza, L. Samuelson, D. Hessman, X. Liu, S. Nilsson, W. Seifert, B. Sermage
|
| 180-186 |
Accept Or-Related P Hotoluminescence Spectra in GaAs-(Ga,Al)As Quantum Wells: Electric Field and Doping Profile Effects
Rosana B. Santiago, J. D'Albuquerque E. Castro, Luiz E. Oliveira
|
| 187-191 |
Magnetic Field Effects in the Optical Absorption of Shallow Donor Impurities in Quantum Wells
P. D. Emmel, I. C. da Cunha Lima, A. Ferreira da Silva
|
| 192-196 |
The Effect of a Position Dependent Effective Mass on the Transmission of Electrons Through a Double Graded Barrier
R. Renan, J. M. Pereira, J. Ribeiro, V. N. Freire, G. A. Farias
|
| 197-202 |
? -? Resonant Tunneling Effect in AlAs/GaAs Single Quantum Barriers under Hydrostatic Pressure
Y. Carboneau, J. Beerens, L. A. Cury, H. C. Liu, M. Buchanan
|
| 203-208 |
Magnetotunneling Studies of the Dimensionality of the Emitter Electron Gas of Double Barrier Devices
B. R. A. Neves, E. S. Alves, J. F. Sampaio, A. G. Oliveira, L. A. Meneses
|
| 209-213 |
Analytic Expressions for Interdiffusion Coefficients in Quantum Well Heterostructures
M. T. Furtado, M. S. S. Loural
|
| 214-219 |
Folded Acoustic Phonons Studies in Si/GexSil-x, AND Ge/GexSil-x, Superlattices
V. Lemos, O. Pilla, M. Montagna, P. Benassi, A. Fontana, C. F. de Souza, W. Carvalho Junior
|
| 220-223 |
Raman Study of Strain Effects on 100 and 111 Oriented GaAs/CaF2 Heterostructures
P. S. Pizani, C. Fontaine, R. Carles
|
| 224-229 |
Optical Properties of a Dense 2-D Electron Gas
F. Likawa, M. J. S. P. Brasil, J. A. Brum, P. A. Schulz, A. A. Berilussi, R. G. Pereira, R. C. Oliveira, W. Van de Graaf, C. Borghs
|
| 230-241 |
Electronic States and Optical Absorption in Strained Heterostructures under External Electric Field
G. E. Marques, A. M. Cohen
|
| 242-247 |
E1 - Like Optical Transitions in Ge/Si Heterostructures Studied by Electroreflectance and Photoreflectance
P. A. M. Rodrigues, M. A. Araújo Silva, F. Cerdeiia, J. C. Bean
|
| 248-253 |
Cyclotron Resonance of Interface Polarons in Sernicomductor Heterostructures
Francisco A. P. Osório, Marcos H. Degani, Oscar Hipólito
|
| 254-259 |
Fermi Surface Study of Spike Doped GaAs Superlattices
A. B. Henriques, S. M. Shibli
|
| 264-269 |
Electronic Properties and Stability of 011 GaAs/InAs, GaP/LnP, Gal-xInxAs/GaAs(InAs) and Gal-xInxP/GaP(InP)
R. H. Miwa, R. Claudino da Silva, A. C. Ferraz
|
| 270-276 |
Theoretical Investigation of Differential Photoreflectance Spectra From Planar-Doped Layers in Semiconductors
Dmitri Beliaev, Luísa M. R. Scolfaro, José R. Leite
|
| 277-282 |
Growth and Properties of Self Assembling Quantum Structures on GaAs Surfaces
P. M. Petroff
|
| 283-296 |
Electrons in Non-Homogeneous Magnetic Fields
F. Peeters, A. Matulis
|
| 297-301 |
Magnetic Field Tuned Transition Of Aharonov-Bohm Oscillations from hc/e to hc/2e Periodicity in the Array of AlGaAs/GaAs Rings
G. M. Gusev, P. Basmaji, D. I. Lubyshev, J. C. Portal, L. V. Litvin, Yu V. Nastaushev, A. I. Toropov
|
| 302-306 |
Impurity Excited States and 1S ? 2S(2Pz) Line Strengths in Quantum-Well Wires
A. Latgé, M. de Dios-Leyva, Luiz E. Oliveira
|
| 307-316 |
Relaxation of Hot Electrons in One-Dirnensional Nanostructures Via LO-Phonon Emission
Vera Beatriz Campos, Sankar das Sarma
|
| 317-322 |
Conductance Fluct Uations in a Mesoscopic Conductor with Antidots
G. M. Gusev, P. Basmaji, M. H. Degani, J. C. Portal, P. W. H. Pinkse, Z. D. Kvon, L. V. Litvin, Yu V. Nastaushev, A. I. Toropov
|
| 323-329 |
Stark-Wannier States in Nanostructures
E. A. M. Fagotto, P. A. Schulz, J. A. Brum
|
| 330-336 |
Electron-Phonon Effects on Transport in Mesoscopic Heterostructures
E. V. Anda, S. S. Makler, H. M. Pastawski, R. G. Barrera
|
| 344-348 |
Linear and Nonlinear Optical Characteristics of Porous Silicon
A. V. Ghiner, G. I. Surdutovich
|
| 349-354 |
Luminescence Degradation and Fatigue Effects in Porous Silicon
V. Grivickas, J. Kolenda, A. Bernussi, B. Matvienko, P. Basmaji
|
| 355-362 |
Spatial Correlations and Quasi-Periodicity of Charged Impurities
J. R. Anderson
|
| 363-369 |
Silicon Heavily Doped MBE Grown Al0.3Ga0.7As Samples
A. G. de Oliveira, G. A. M. Safar, J. F. Sampaio
|
| 370-374 |
Energy Parameters in the Three-Minima Model for the DX center
D. A. W. Soares, G. M. Ribeiro, J. F. Sampaio, A. S. Chaves, A. G. de Oliveira
|
| 375-378 |
Transport Properties of Heavily Doped Al0.3Ga0.7As Semiconducting Alloys
G. Medeiros-Ribeiro, A. G. de Oliveira, D. A. W. Soares, G. M. Ribeiro
|
| 379-384 |
Photoinduced Conductivity in n-type AIxGal-xAs at Low Temperature
L. V. A. Scalvi, L. Oliveira, E. Minami, M. H. Degani, M. Siu Li
|
| 385-389 |
Optically Active Defects Induced By SiNx PECV Deposition on InGaAs-An SRPL Study
A. C. Lamas, A. L. Gobbi
|
| 399-404 |
Ground- and Excited-State Impurity Bands in Silicon Inversion Layers
Oscar Hipólito, Antonio Ferreira da Silva
|
| 405-411 |
Selected Properties of Hydrogenated Silicon Carbon Alloys with Very Low Densities off States
F. Alvarez
|
| 412-415 |
Light Induced Creation and Annealing of Metastable Defects in Hydrogenated Amorphous Silicon
C. F. O. Graeff, M. Stutzmann
|
| 416-419 |
Photoluminescence, Disorder and Localization In Amorphous Silicon Carbon Alloys
C. Schimidt de Magalhães, C. Bittencourt, F. Alvarez
|
| 420-424 |
On the Influence of Deposition Temperature on the Microvoid Structure and Hydrogenation of a-Ge:H FILMS
M. Mulato, I. L. Torriani, I. Chambouleyron
|
| 425-429 |
Thermal Annealing in a-CdTe:O Films
F. J. Espinoza-Beltrán, R. Ramirez-Bon, F. Sánchez-Sinencio, O. Zelaya-Angel, G. Torres-Delgado, J. G. Mendoza-Alvarez, J. González-Hernández, M. H. Farías, L. Bafios
|
| 430-433 |
Fractal Origin of the Thermal Oxidation of Silicon
Eronides F. da Silva, José Albino Aguiar, Marcelo A. F. Gomes
|
| 434-437 |
Nitrogen Doping in Amorphous Semiconductors
A. R. Zanatta, I. Chambouleyron
|
| 438-444 |
The Recombination Process in Hydrogenated Amorphous Silicon Germanium Alloys
C. F. O. Graeff, I. Chambouleyron, M. Stutzmann
|
| 445-449 |
Resonant- Cavity Light-Emitting Diodes
E. F. Schubert, N. E. J. Hunt, D. L. Çivco, A. Y. Cho
|
| 450-455 |
Novel Applications of Secondary Ion Mass Spectrometry in Optoelectronic Materials Studies
Steven A. Schwarz
|
| 456-459 |
Electro-Optic Characteristics of GaInP/GaAs/GaInAs Strained Quantum Well Lasers
A. A. Bersnussi, R. B. Martins, M. Machado
|
| 460-465 |
Optical and Structural Properties of Low Temperature GaAs Layers Grown by Molecular Beam Epitaxy
A. A. Bernussi, C. F. Souza, W. Carvalho, D. I. Lubyshev, J. C. Rossi, P. Basmaji
|
| 466-472 |
Modelling of 1.55?m InGaAs/InP Multiquantum Well Lasers
M. T. Furtado
|
| 473-479 |
Fabrication of GaInAsSb/GaAlAsSb Double Heterostructure Lasers Emitting At 2.2?m
M. B. Z. Morosini, M. S. S. Loural, J. L. Herrera-Pérez, A. A. G. von Zuben, A. C. F. da Silveira, N. B. Patel
|
| 480-484 |
Semiconductor Optical Bistability and Switching
Sergio Bezerra
|
| 485-490 |
Effect of the Multiphoton Susceptibility on the Characteristics of Serniconduct Or Devices
A. Sergio Bezerra Sombra
|
| 260-263 |
Plasmon-Polaritons Spectra in Quasi-Periodic Semiconductor Superlattices
E. L. Albuquerque, M. G. Cottam
|
| 337-339 |
Raman Scattering Study of GaAs grown on Porous Si by Molecular Beam Epitaxy
P. Basmaji, J. C. Galzerani, D. I. Lubyshev, P. S. Pisani, J. C. Rossi, S. W. da Silva
|
| 340-343 |
Wire Crystals of GaAs and InAs Grown by Molecular Beam Epitaxy on Porous Silicon
P. Basmaji, G. Gusev, D. I. Lubyshev, J. C. Rossi
|
| 390-398 |
Electronic States of Copper-Related Impurities in Germanium
|